Discretes

VETH100A1DD1 is a bidirectional ESD protection diode for automotive Ethernet, compliant with OPEN Alliance 100Base-T1 and 1000Base-T1. Made by Vishay, it comes in a wettable flank DFN1006-2B package  measuring 1 x 0.6 x 0.45mm. Working range is ±24V, and clamping is typically at 31V for 1A, “a result of its snap-back technology with a trigger voltage >100V”, said the company. ...

Nexperia has announced 20 bipolar power transistors in 2 x 2mm DFN2020D-3 packaging, half of them automotive-qualified. The span 50 and 80V ratings, 1 to 3A currents and both npn and pnp polarities. “DFN2020D-3 packaged devices deliver an 80% reduction in board space when compared to SOT89, and a 90% reduction compared to SOT223,” according to the company. “The package ...

Onsemi has announced a 112 x 62mm power module for flying capacitor boost converters up to 1kV. It combines 1kV silicon IGBTs and 1.2kV silicon carbide diodes in the company’s F5BP package. Called NXH500B100H7F5SHG, it can handle continuous collector currents up to 210A (630A pulsed) (Tj = 175°C). Abs max power dissipation is 305W. To reducing stray inductance and thermal ...

Alpha and Omega has turned to 5 x 6mm LFPAK surface-mount packaging for a family of mosfets aimed at industrial, server power, solar, and telecommunication applications. Available at 40V, 60V, and 100V (see table) “AOS’s LFPAK enables higher board-level reliability due to gull-wing leads, which offer a ruggedised solution for board-level environmental stresses”, according to the company. “Gull-wing leads also ...

SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two mosfet hald-bridges and two Schottky half-bridges, aimed at new designs as well as efficiency-boosting replacements in legacy systems. 1.2kV 62mm power modules  Configuration Current Rds(on) GCMX003A120S7B1 SiC mosfet half-bridge ...

Power factor correction with CCM (continuous conduction mode) boost converters is where ITG Electronics is aiming its latest choke family. Specifically, the series is for converters operating at between 100 and 200kHz, and up to 3.3kW. There are four parts, from 90 to 285uH, all with a 43 x 35mm footprint and standing 38mm above the PCB. They can operate ...

Nexperia has introduced 80 and 100V mosfets in 5 x 6 and 8 x 8mm footprint LFPAK packaging with Rds(on) ranging from 1.8 to 15mΩ, or 2.07mΩ upwards for the 100V parts. “Many mosfet manufacturers focus on achieving high efficiency through low Qg(total) and low Qgd, when benchmarking the switching performance of their devices against alternative offerings,” said the company. ...

KOA Speer Electronics has brought out a multilayer type metal oxide varistor that handles a surge current of up to 6,000A. The multilayer construction of the NV73S can absorb a large surge despite its small size. The two-way symmetries can absorb positive and negative surges. The NV73S replaces the NV732E (1210) through 2L (2220) due to its improved surge protection. ...

Taiwan Semiconductor has introduced ten AEC-Q101-qualified small-signal mosfets. There are seven n-channel parts (including two duals), and three p-channel parts (one dual) in the ‘TQM’ line – see the table below. Three packages are used: SOT-236, SOT-363 or SOT-323, and they are rated for >2kV ESD withstanding. “In addition to automotive applications, these small-footprint MOSFETs are ideal for high-reliability commercial designs ...

EPC Space has created two surface-mount 40V radiation-specified GaN hemts for space use. EPC7001BSH is a 50A (120A pulse) 11mΩ transistor in 5.7 x 3.9mm packaging EPC7002ASH is a 15A (40A pulse) 28mΩ transistor in 3.4 x 3.4mm packaging “Both devices have a total dose radiation rating greater than 1,000kRad(Si) and SEE immunity for LET of 83.7MeV/mg/cm2 with Vds up ...