Discretes

X-REL Semiconductor has two power conversion ICs for demanding markets including aerospace, industrial, hybrid and electric vehicles, transportation, geothermal and oil and gas.

Infineon is shipping a new class of low saturation voltage VCE(sat) IGBTs specifically optimised for low switching frequencies ranging from 50Hz to 20kHz. It calls it the L5 family.

Vishay is aiming at zero voltage and soft switching applications by improving mosfet body diodes in a range of 600V power mosfets. The body diodes in SiHx28N60EF (28A) and SiHx33N60EF (33A) are fast, with low reverse recovery charge and on-resistance. Built on second-generation super-junction technology, the ‘EF’ series mosfets are designed to complement Vishay’s existing standard E Series components, expanding ...

Circuit protection firm Littelfuse is extending the reach of its Speed2Design programme through its design community website for engineers looking for support with circuit protection.

Microsemi’s latest silicon carbide (SiC) mosfets are on show at PCIM in Nuremberg, Germany this week. These are 1200V mosfets intended to be offer improved energy efficiency in high power applications include solutions for solar inverters, electric vehicles, welding and medical devices. The devices’ low gate resistance will minimise switching energy loss, even at high frequencies. According to Marc Vandenberg, general manager for Microsemi’s power products, ...

GaN Systems has announced at PCIM in Nuremberg, Germany a family of normally-off 100V GaN transistors with 20-80A output current specification. The low resistance transistors designated – GS61002P, GS61004P, GS61006P and GS61008P – are respectively 20A/21mΩ, 40A/11mΩ, 60A/8mΩ and 80A/5mΩ parts while GS71008P is an 80A/5mΩ half bridge device. Speaking at the exhibition, the company said: “We believe we are the first ...

Toshiba Electronics has announced at PCIM in Nuremberg, Germany a range of low-voltage Trench-mosfets with a typical RDS(ON) of only 0.7mΩ (max 0.85mΩ). The mosfets are fabbed in the firm’s new U-MOS IX-H process and are intended for high-side and low-side switching in DC-DC converters and secondary side synchronous rectification in AC-DC conversion circuitry. “By improving the RDS(ON) value, the technology supports die size reductions of 65% ...

Toshiba Electronics has introduced a series of high-speed switching type 600V super junction mosfets. The DTMOS IV-H series consists of the TK31N60X, TK39N60X and TK62N60X. The series achieves a high speed switching performance while retaining low ON-resistance levels. This is accomplished through the reduction of parasitic capacitance between gate and drain, (typical Ciss ranges from 3000 to 6500pF). According to ...

Bourns has introduced high power protection diodes for use in AC and DC power line applications. The Transient voltage suppressor (TVS) diodes are designed into a surface mount package which Bourns says gives a 20% reduction in peak clamping voltage compared to an equivalent through-hole device because of its lower lead inductance. “The result is reduced electrical stress on the ...

Vishay has introduced a 100A inductor in a 8787 (22×22.5mm) surface mount case 13mm(max) high. Operating from -55 to 155°C IHLP-8787MZ-51 comes in values from 0.47 to 100µH with ratings from 100 to 7A and resistance spanning 0.67 to 39.4mΩ. These are saturation currents, which the firm defines as dropping inductance by 20%. Typical maximum operating current – at which ...