Discretes

SemiQ will unveil 1,200V silicon carbide half-bridges packaged in S3 modules at PCIM next month. The industry-standard package is 62mm long and 26.3mm high. So far, only the part numbers and basic specs have been revealed: GCMX003A120S3B1-N 600A 3mΩ GCMX005A120S3B1-N 400A 4.5mΩ They will be aimed at induction heaters, welding equipment, uninterruptible power supplies photovoltaic inverters, wind inverters, energy storage, ...

Nexperia has put 1,200V silicon carbide mosfet die into D2PAK-7 surface mount package, also known as TO-263-7. “SiC switches in SMD packages like D2PAK-7 [are] becoming increasingly popular in industrial applications including electric vehicle charging, uninterruptible power supplies and inverters for solar and energy storage.” NSF0xx120D7A0 is the SiC mosfet family name, and they come with different on-resistances: NSF030120D7A0 30mΩ ...

Silicon carbide chip company SemiQ has begun a known-good-die screening program for SiC mosfets “that delivers electrically sorted and optically inspected SiC technology ready for back-end processing and direct die attachment”, it said. It covers 1,200V 20 (pictured), 40 or 80mΩ mosfet die (119, 63 or 35A at 25°C respectively). “Our known-good-die SiC mosfets provide performance advantages such as near-constant ...

Alternatives for Murata’ LQH series of fixed inductors are available with short lead times of between five to seven weeks, announced BEC Distribution. The wire wound, surface mount fixed inductors have a high Q value for low resistance and also have a high inductance for filtering high frequency noise. A spokesperson told Electronics Weekly that typical specifications include an operating ...

New Yorker Electronics is aiming at displacing PowerPAK 1212 packaged mosfets by stocking a pair of symmetric 80V n-channel mosfets in a single 3.3 x 3.3mm package from Vishay. Called SiZF4800LDT, the “device provides designers with a space-saving solution for synchronous buck converters, point-of-load converters, and half-bridge and full-bridge power stages,” according to New Yorker. “In these applications, the high ...

Infineon is aiming at automotive power control with a 5 x 7mm top-side cooled surface-mount package, pitching it against the 5 x 6mm bottom-cooled SSO8. The package, SSO10T, has a 10μm gap instead of a thermal pad on the PCB side, and around 95% of heat will leave through the top, according to the company, typically to the ECU housing ...

Panasonic Industry has introduced compact surface-mount electrolytic polymer hybrid capacitors that are “one size smaller than ZC series with the same capacitance” and AEC-Q200 compliant for automotive use, it said. Called the ZL series, the parts come in five case sizes from 5mm diameter (ø) x 5.8mm high (47 or 82μF), to 10ø x10.2mm (470 or 680μF). There are two ...

Navitas Semiconductor has demonstrated a 4.5kW 54V server power supply using both GaN and SiC transistors. Claimed density is “over 130W/in3 with efficiency over 97%. The architecture replaces the standard four diode bridge (and boost power factor correction) at the front end with an active all-transistor circuit – a multi-phase totem pole power factor corrector. While often called ‘bridgeless’ because ...

Infineon Technologies has put 2kV silicon carbide mosfet die in its four lead TO-247PLUS-4-HCC package, aiming them at systems with dc links up to 1.5kV. “It is the first discrete silicon carbide device with a breakdown voltage of 2,000V on the market, with a creepage distance of 14mm and clearance distance of 5.4mm,” according to the company. “The devices are ...

Component distributor Richardson RFPD is to stock a range of 0603 (1.5 x 0.7mm) RF components from TTM Technologies, all branded ‘Xinger’ and “designed to meet the density and performance challenges of next-generation 5G transceiver and power amplifier applications”, according to Richardson. They include: Three Xinger 90° 3dB hybrid couplers at 1.8 – 2.3GHz, 2.2 – 2.8GHz or 3.1 – ...