UnitedSiC has introduced what it claims is industry’s lowest Rds(on) 650V SiC FET in a low-profile DFN 8×8 surface-mount package. Called UF3SC065030D8S, its Rds(on) is 34mΩ, and UF3SC065040D8S is a cheaper partner device that achieves 45mΩ. “Both SiC FETs have a current rating of 18A (limited by wire count in the package), and a maximum operating temperature of 150°C,” according to ...
Discretes
Low profile power diodes drop only 360mV at 2A
Vishay has expanded its range of ‘eSMP’ trench MOS barrier schottky rectifiers, with 16 different 2A or 3A devices – all in a low profile (1mm) SMP (DO-220AA) package – with a 2.2 x 4mm footprint. For part numbers, scroll down to the table. Reverse voltages span 45 to 200V, “while their 3A rating is the industry’s highest for the ...
Bus switches from Diodes rereleased in smaller packaging
Diodes has announced its family of quad- and dual-channel 4:1 and 2:1 bus switches are now available in a 3x3x0.65mm package. The package is designed to enable increased PCB density and reduce product dimensions when developing PC notebooks and tablets as well as networking and telecommunications equipment. Discrete logic devices, such as bus multiplexers and demultiplexers, remain a critical element ...
Schottky rectifiers up to 60V 15A for automotive
Taiwan Semiconductor has introduced 45V and 60V trench Schottky rectifiers in a TO-277A-compatible SMPC4.6U package, and qualified to AEC-Q101 for the automotive market. The surface-mount package is only 1.1mm high and has wettable flanks for automated optical inspection. The parts are TSUPxM45SH or TSUPxM60SH, depending on whther the current rating is 45A or 60A, and the ‘x’ needs to be replaced with ...
Nexperia joins the GaN FET market for high voltage applications
Nexperia has announced its entry into the GaN FET market with the introduction of the 650V GAN063-650WSA, with a gate-source voltage (VGS) of +/-20V and a temperature range of -55 to 175°C. The GAN063-650WSA features a low RDS(on) – down to 60 mΩ – and fast switching for efficiency. The company is targeting applications including xEV, datacentres, telecom infrastructure, industrial ...
Pickering Electronics 10W reed relay with 4x4mm pcb footprint
Pickering Electronics has extended its 4mm product family with the Series 122 reed relay. Used in high speed test systems, occupying a PCB footprint of 4x4mm, Pickering claims the relay provides the highest packing density currently available. The relay measures 12.5mm in height and can operate from 3V or 5V. Its contacts are rated with a switching current of 0.5A ...
SiC mosfets hard switch 1,200V at up to 115A
Wolfspeed’s third-generation planar silicon carbide mosfets have been designed with an increased Cgs/Cgd ratio for better hard-switching performance and more linear Coss behaviour for soft-switching applications, according to Richardson RFPD. The distributor is stocking new third-generation parts with a rugged intrinsic body diode that allows for third-quadrant operation without an additional external diode. Applications are expected in solar energy, electric ...
650V/1200V SiC MOSFETs in 4-pin package
ROHM has six new trench gate structure SiC MOSFETs (650V/1200V), the SCT3xxx xR-Serie, ideal for server power supplies, UPS systems, solar power inverters, and EV charging stations requiring high efficiency. The SCT3xxx xR series utilizes a 4-pin package (TO-247-4L) that maximizes switching performance, making it possible to reduce switching loss by up to 35% over conventional 3-pin package types (TO-247N). ...
Crystals are tough for cars
The SAE J2657 specification is the target Diodes is aiming at with its XRQ range of crystals for tyre pressure monitoring
Infineon extends CoolSiC portfolio
Infineon extends its CoolSiC Schottky 1200 V G5 diode portfolio with the release of a TO247-2.