Discretes

Infineon has put 650V mosfet die from its CFD7A portfolio into a surface-mount package with “improved electrical performance over the well-known TO247 through-hole devices, thus enabling efficient energy utilisation in onboard chargers and dc-dc converters”, it said. ‘QDPAK TSC’ is a top-side-cooled package (see images) announced earlier this year and now registered with JEDEC – at the same time it ...

Toshiba has launched its first 30V n-channel common-drain dual mosfet, for controlling bi-directional power flow in USB-connected devices. The USB Power Delivery standard supports power levels from 5V 3A to 48V 5A, and allows swapping of the power supply and receiving side, requiring devices with USB charging to support bi-directional power. In developing a 30V common drain mosfet, called SSM10N961L, ...

Toshiba has launched a 200A 40V 0.66mΩmax automotive grade n-channel mosfet that can handle 600A pulses in a 7 x 8.44 x 2.3mm gull-wing package. “Automotive safety-critical applications such as steering, braking and autonomous driving systems generally require more devices than other systems to meet redundancy requirements. Here, a power mosfet with high current density is required due to the ...

Rohm has developed a range of five 100V dual mosfets for single-phase or three-phase bridges in fan motor drives. Four of them are dual n-channel in 5 x 6mm or 3.3 x 3.3mm packages, and one has one n-channel and one p-channel mosfet in the same 5 x 6mm package. “Recent years have seen a transition to higher voltages from ...

Nexperia is aiming at protecting high-speed automotive data lines with ESD protection diodes whose capacitance is as low as 0.28pF. With stand-off voltages in the 18 – 32V range and a snap-back characteristic, the AEC-Q101 (automotive) qualified parts are intended to be used close to connectors on boards. The base part number is PESDxxVF1Byy-Q, with xx representing the nominal stand ...

Nexperia has announced a series of 500mA dual bipolar transistors that include base resistors within the 2 x 2 x 0.65mm package – there is a choice of SOT1118 (DFN2020-6) or AEC-Q101 automotive qualified versions in SOT1118D (DFN2020D-6) with wettable flanks. There are 12 devices, giving every combination of: package, NPN+NPN, NPN+PNP or PNP+PNP pairing and 1 or 2.2kΩ series ...

Central Semiconductor has announced a pair of dual hyper-fast rectifiers in TO-247 packaging, designed for use with super-junction mosfets. CRU24715-600 has two 600V 15A rectifiers with a common cathode CRU24730-600 has two 600V 30A rectifiers with dual common cathode Connecting the internal diodes in parallel pushes current rating to 30A or 60A respectively, and the package can cope with up ...

Rohm has co-packaged a gate driver and a 650V GaN power transistor to ease the design of power supplies in servers and ac adaptors. “While GaN hemts are expected to contribute to greater miniaturisation and improved power conversion efficiency, the difficulty in handling the gate compared to silicon mosfets requires the use of a dedicated gate driver,” according to the ...

Toshiba has picked a four-pin package for its latest third-generation silicon carbide mosfets. “Devices in the TWxxxZxxxC series are the first Toshiba SiC products to be housed in a TO-247-4L(X) package with a fourth pin,” according to the company. “This allows the provision of a Kelvin connection of the signal source terminal for the gate drive, thereby reducing the parasitic ...

EPC Space has introduced radiation-hardened gallium nitride devices for space-borne power converters and other rugged environments. There are two devices, one rated at 200V and the other at 300V: EPC7020G  – 200V, 14.5mΩ, 80A (pictured) EPC7030G – 300V, 32mΩ, 50A “Applications including power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation, reaction wheels and deep space ...