Discretes

EPC Space has announced 100V and 200V rad-hard GaN power transistors for space use “with ultra-low on-resistance and extremely low gate charge for high power density solutions”, according to the company. Judge for yourself, these are the typical values: EPC7007B (200V 18A): 28mΩ 5.4nC EPC7018G (100V 90A): 6mΩ 11.7nC “These additions to our rad-hard product line enable a generation of ...

MagnaChip has produced a 24V MOSFET for wireless earphone batteries which addresses the issue of reducing conduction loss after a quick charge. The core cell density has been increased by 30% compared to the previous version, while the design of the core cell, termination and source pads has been enhanced in order to reduce the *RDS(on) by 24%. As a ...

Rohm has developed its 4th generation 650V fast recovery diodes (FRDs), balancing forward voltage and reverse-recovery time for high-power industrial and consumer equipment including air conditioners and electric vehicle charging stations. RFL series (right) is nominally low forward voltage and reduces Vf by ~3.2% and trr by ~8.3% compared with the existing RFN series. RFS series (right), nominally high-speed, reduces ...

Nexperia has released 20V and 30V mosfets in DFN0603-3 (SOT8013), “the smallest DFN package”, it said. The company already offers ESD protection devices in the 0.63 x 0.33 x 0.25mm package. “Next generation wearable and hearable devices are creating several challenges for product designers,” it said. “Firstly, available board space is at a premium as functionality is added, plus heat ...

Distributor Rutronik is stocking a 100V multi-layer ceramic capacitor (MLCCs) from Samsung Electro-Mechanics. The part, called CL32Y106KCVZNWE, has a capacitance of 10μF and uses an X7S dielectric to get it into a 3.2 x 2.5 x 2.5mm package. Rutronik is promoting it for use on 48V power rails, where companies are switching up from 12V to increase power efficiency. “The ceramic ...

EPC has announced a 100V 3.9mΩ radiation-hardened GaN HEMT. Called EPC7018 it comes in a 13.9mm2 chip-scale package (the ‘flag’ in the image) and can handle pulses up to 345A. The total dose radiation rating is greater than 1Mrad, and SEE immunity for LET of 85MeV/(mg/cm2). “EPC7018 offers designers a high power, low on-resistance device enabling a new generation of power conversion and ...

Vishay has introduced three series of 24V surface-mount transient voltage suppressors (TVS) that offer peak pulse power dissipation equivalent to the 7kW of conventional TVS at 10/1000μs in SMC (DO-214AB) packaging and 10/10,000 μs in DO-218AB, it said. The bidirectional devices work over -55 to +175°C for automotive, telecom and industrial applications. With 24V maximum clamping, XMC7K24CA series offers 180A peak ...

Vishay Intertechnology has introduced a series of surface-mount bidirectional transient voltage suppressors in SMC (DO-214AB) packaging for automotive, industrial and telecom use. Surge capability is 3kW at 10/1,000μs to meet the specifications of ISO 16750-2 Pulse b. Called the SMC3KxxxCAHM3_A series, leakage current can be as low as 1μA from 22 to 120V, and operatioj is up to 175°C. For high reliability, ...

Renesas is putting Y90bn into a 300mm power semiconductor fab in Kai City, Yamanashi Prefecture, citing the rise of electric vehicles as motivation. This is the Kofu Factory, closed in October 2014 when it ran 150mm and 200mm wafer lines in its 18,000m2 cleanroom, now to re-open in 2024 “to enhance production capacity for power semiconductors such as IGBTs”, according to the ...

Infineon has released a pair of high power IGBTs, both blocking 4.7kV, in ceramic PPI (press pack IGBT) packaging. The 125mm pole piece diameter housing is hermetically sealed and specifically designed to withstand system-induced failures. “This PPI is specifically designed for transmission and distribution applications, and is ideal for high current MMCs [modular multi-level converters], medium voltage drives, dc breakers, ...