Discretes

EPC is claiming “the lowest on-resistance GaN FET on the market” for its 1mΩ 100V EPC2361, which comes in a 3 x 5mm QFN package with top and bottom cooling. 1mΩ is at 50A 25°C with 5V on the gate, and rises to ~1.8mΩ at the max operating temperature of 150°C (minimum is -40°C). The preliminary data sheet has no ...

Rohm has created a proprietary trench MOS structure for 100V Schottky diodes to improve the trade-off between forward voltage and reverse leakage. It has been used to create the YQ series of rectifier diodes, available in surface-mount packages from 0.5 x 1mm to TO-263 with ratings between 1A and 30A. Most of them are available with automotive qualification. Leakage is ...

Innoscience Technology has launched a 100V bi-directional GaN-on-silicon bi-directional transistor, intended to replace a pair of back-to-back mosfets for turning a power rail on and off. It “can be employed in 48V or 60V battery management systems, as well as for high-side load switch applications in bidirectional converters and switching circuits in power systems”, according to the company, which sees ...

Toshiba has introduced a 60V p-channel mosfet rated at 60V and 90A continuous current, with AEC-Q101 qualification for automotive use. Called XPH8R316MC (90A), the company sees it being used in vehicles, in load switches, electronic relays and motor drives. A similar part, XPH13016MC, is the same except rated at 60A. In both cases, pulse rating is double the continuous current ...

Alpha and Omega has announced a double-side-cooled 100V 197A (25°C) mosfet in a 5 x 6mm DFN package. Called AONA66916, thermal resistance form the junction to the top and bottom surfaces is 0.5 and 0.55C/W respectively. “The top-exposed DFN 5×6 package shares the same footprint as AOS’ standard DFN 5×6 package, eliminating the need to modify existing PCB layouts,” said ...

Rohm has added a lineup of 600V super-junction mosfets in 6.5 x 7 x 1.66mm SOT-223-3 packaging. “In recent years, power supplies for lighting and motors for pumps are required to be smaller as devices become more sophisticated – spurring the demand for compact mosfets that are essential for switching operation,” said the company. “Generally, however, it has been difficult ...

SemiQ will be exhibiting its 1.2kV SOT-227 silicon carbide mosfet power modules at APEC, the Applied Power Electronics Conference, at the end of February. The modules come with or without a co-packaged Schottky diode, with current ratings between 30 and 113A, and on-resistance spanning 80mΩ to 20mΩ respectively (see table). The SOT-227 package is designed to be bolted to a ...

Vishay has introduced four ultra-fast 200V rectifier diodes: VS-1EAH02xM3 (1A) VS-2EAH02xM3 (2A), VS-3EAH02xM3 (3A) VS-5EAH02xM3 (5A) “Their low-profile DFN3820A housings provide a space-saving solution with high efficiency, predestined for commercial, industrial and especially automotive applications – they are each available as Vishay Automotive Grade, AEC-Q101 qualified versions,” according to distributor Rutronik, which is stocking the parts. Taking the 3A VS-3EAH02HM3 ...

Central Semiconductor has announced five 650V n-channel super-junction mosfets in TO-220FP packaging. They are: CDMSJ2204.7-650 (4.7A) CDMSJ2207.3-650 (7.3A) CDMSJ22010-650 (10A) CDMSJ22013.8-650 (13.8A) CDMSJ22029-650 (29A) “These super-junction mosfets extend efficiency for a variety of end applications,” according to Central marketing director Tom Donofrio. Additionally, “these pair well with Central’s fast rectifiers for power factor correction”.

Toshiba is in volume production of a photovoltaic output photocoupler with an enhanced open-circuit voltage suitable for gating high-voltage power MOSFETs commonly used in solid-state relays (SSRs). The TLX9910 photocoupler is primarily intended for use within SSR applications in automotive. However, it can equally be used in industrial applications, such as renewable energy. This combination enables high-voltage, high-current switching, which ...