Analogue / Linear / Mixed Signal ICs

Senseeker has introduced a 1,280 x 1,024 version of its 10µm digital read-out IC (‘droic’) for short-wave infra-red imaging arrays, including quantum dot-based detector types. RD0131 as it will be known has a capacitive transimpedance amplifier (CTIA) front-end. There are three selectable gains, with well capacity of: 22k electrons (high-gain), 160ke- (medium) or 1.1Me- (low). In high gain, room temperature ...

Würth Elektronik has created a range of opto-isilated triacs for controlling light AC loads and larger triacs. They are called WL-OCTR, and come in a choice of packages: through hole DIP-4 or DIP-6, or surface-mount SOP-4. Through-hole parts offer 5kV breakdown between input and output, which drops to 3.75kC for surface mount. DIP parts can also be supplied with legs ...

At DAC 2024, Efabless celebrated a milestone of 40 commercial companies designed chips using its chipIgnite and Google-sponsored OpenMPW programme. Of these, some are ready for production volumes, the majority are at the prototype/proof of concept stage, said CEO, Michael Wishart. The platform allows start-ups and smaller companies to prototype designs and innovate without having to buy a license, he ...

Nisshinbo Micro Devices has released a series of industrial 5V analogue front end ICs with high-resolution ΣΔ converters, input multiplexers, programmable gain amplifiers and sensor excitation current sources. NA2202 has 16bit resolution NA2203 has 20bit resolution NA2204 has 24bit resolution “Microcontrollers with 5V operating voltage are still widely used in the industrial equipment market, according to the company. “In order ...

At the IEEE VLSI Symposium this week, Imec revealed two ADCs for 5GHz ‘beyond 5G’ communication, one for base stations and one for phones. The base station ADC operates over bands up to 5GHz. It is a 10Gsample/s cmos hierarchical time-interleaved ADC that delivers 9 ENOB (effective number of bits) at low frequencies and 8.2 ENOB at Nyquist. SFDR (spurious-free ...

STMicroelectronics has added I2T fusing to a automotive quad high-side power switch. As well as current-squared time fusing VNF9Q20F, as it will be known “responds within 100µs to turn off the [output] mosfet if excessive current is detected”, said ST. “Performing as an intelligent circuit breaker, [it] enhances board-net voltage stability and prevents PCB traces, connectors and wire harnesses from ...

EPC Space has created two surface-mount 40V radiation-specified GaN hemts for space use. EPC7001BSH is a 50A (120A pulse) 11mΩ transistor in 5.7 x 3.9mm packaging EPC7002ASH is a 15A (40A pulse) 28mΩ transistor in 3.4 x 3.4mm packaging “Both devices have a total dose radiation rating greater than 1,000kRad(Si) and SEE immunity for LET of 83.7MeV/mg/cm2 with Vds up ...

Texas Instruments introduced a 450V intelligent power module that includes a GaN three-phase bridge for motors up to 250W. Called DRV7308, it can stand-off 650V and handle pulses up to 5A. Inside its 12 x 12mm QFN package and six 205mΩ hemts (at 25°C ambient), drivers and protection component, and it is capable of implementing inverters with >99% efficiency, according ...

Alpha and Omega Semiconductor is aiming at Meteor Lake and Arrow Lake notebooks with a multi-phase dc-dc converter controller that meets Intel IMVP 8, 9, 9.1, and 9.2 specifications. AOZ71137QI is a three rail seven-phase controller for CPUs that has: up to four phases for the core voltage (‘IA domain’), up to two phases for graphics (‘GT domain’) and one ...

Toshiba has announced 300mA LDOs in a 1 x 1 x 0.37mm DFN4D package. Quiescent current is typically 1.2μA with no load. They are “specifically aimed at applications powered by small-scale batteries [including] IoT modules, communications modules, wearable devices and other miniature equipment”, according to the company. There are over 30 devices spanning outputs of 0.8 to 5.0V, with an ...