PCIM: 50V, 8.5mΩ GaN hemp in 1.5 x 1.2mm package

EPC is aiming at USB-C PD applications 50V 8.5mΩ GaN transistor with a 1.8mm2 footprint.

EPC2057 measures 1.5 x 1.2mm and can handle 9.6A continuously (25°C) and 66A single 300µs pulses (25°C).

With such a tiny package, thermals are important. According to the data sheet, junction-to-case thermal resistance is 2.3°C/W, then it is 7°C/W junction-to-board, 72.5°C/W junction to ambient on a one square inch 2oz copper pad on FR4 or 82°C/W junction-to-ambient using JEDEC 51-2.

EPC90155 is the associated 51 x 51mm development board which implements a 40V rated half-bridge buck power stage using two of the transistors and includes output inductor and capacitors, the level-shifting driver (a uPI Semi uP1966E) and anti-shoot-through logic. An external PWM source and dc supply is required.

Find the EPC2057 on this web page, or on stand 318 in hall 9 at PCIM in Nuremberg for the next three days.