Tag Archives: GaN

Infineon Technologies is to integrate 600 and 700V GaN power hemts alongside gate driver chips inside single packages, in 5 x 6mm or 6 x 8mm SMD packages. IGI70NxxxA2xS is to be a 700V range that combines a single GaN transistor with a single-channel driver in 5 x 6mm PQFN with with 140 to 500mΩ options (IGI70NxxxA2PS), or 6 x ...

Renesas Electronics has completed the acquisition of GaN transistor maker Transphorm. “With the closing of the acquisition now completed, Renesas will immediately start offering GaN-based power products and related reference designs to meet the rising demand for wide bandgap semiconductor products,” said Renesas. “Investing in the power business is an important part of Renesas’ strategy.” Other recent moves it has ...

EPC Space has created two surface-mount 40V radiation-specified GaN hemts for space use. EPC7001BSH is a 50A (120A pulse) 11mΩ transistor in 5.7 x 3.9mm packaging EPC7002ASH is a 15A (40A pulse) 28mΩ transistor in 3.4 x 3.4mm packaging “Both devices have a total dose radiation rating greater than 1,000kRad(Si) and SEE immunity for LET of 83.7MeV/mg/cm2 with Vds up ...

Texas Instruments introduced a 450V intelligent power module that includes a GaN three-phase bridge for motors up to 250W. Called DRV7308, it can stand-off 650V and handle pulses up to 5A. Inside its 12 x 12mm QFN package and six 205mΩ hemts (at 25°C ambient), drivers and protection component, and it is capable of implementing inverters with >99% efficiency, according ...

EPC is aiming at USB-C PD applications 50V 8.5mΩ GaN transistor with a 1.8mm2 footprint. EPC2057 measures 1.5 x 1.2mm and can handle 9.6A continuously (25°C) and 66A single 300µs pulses (25°C). With such a tiny package, thermals are important. According to the data sheet, junction-to-case thermal resistance is 2.3°C/W, then it is 7°C/W junction-to-board, 72.5°C/W junction to ambient on ...

Infineon has announced a flurry of new power products as a prelude to PCIM in Nuremberg next week, the latest of which is a family of 600V super-junction mosfets. Its eighth generation, “the devices combine the best features of the 600V CoolMOS 7 series and are the successors to the P7, PFD7, C7, CFD7, G7 and S7 product families”, according ...

Cambridge GaN Devices (CGD) has teamed up with Qorvo to build a GaN-based evaluation kit for controlling brushless-dc and permanent magnet synchronous motors. From Qorvo comes its PAC5556A motor control IC that combines a 150MHz Arm Cortex-M4F processor and 128kbyte of flash, with 600V gate divers, PWMs and multi-chanel data conversion. CGD is providing its IC-based GaN power hemts that ...

Infineon has announced bi-directional GaN power transistors at 40, 650 and 850V, and a current sensing GaN transistor. There are two types of bi-directional transistor: The 650 and 850V devices are both normally-off monolithic gate-injection transistors with four operational modes via two separate gates and a substrate terminal, to deliver what the company calls ‘independent isolated control’. “They utilize the ...

Transistor maker Cambridge GaN Devices has signed a memorandum of understanding with Taiwan’s Industrial Technology Research Institute to develop USB-PD adaptors as well as to share international market information, visit to potential customers and promote the PSUs. The agreement covers 140 – 240W, >30W/in3, ac-dc power adapters for e-mobility, power tools, notebooks and phones (prototype GaN-based USB PD adapter right) ...

EPC is aiming at satellites with an application note on four-phase dc-dc point-of load converters using multiple 26 x 19mm modules. The note, AN005, picks a radiation-specified current-mode PWM controller from Texas Instruments (TPS7H5001-SP) as a source of PWM waveforms. Each TPS7H5001-SP can produce two pairs of upper and lower PWMs for a total of two phases, and TPS7H5001-SP has ...