Tag Archives: mosfet

SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two mosfet hald-bridges and two Schottky half-bridges, aimed at new designs as well as efficiency-boosting replacements in legacy systems. 1.2kV 62mm power modules  Configuration Current Rds(on) GCMX003A120S7B1 SiC mosfet half-bridge ...

Nexperia has introduced 80 and 100V mosfets in 5 x 6 and 8 x 8mm footprint LFPAK packaging with Rds(on) ranging from 1.8 to 15mΩ, or 2.07mΩ upwards for the 100V parts. “Many mosfet manufacturers focus on achieving high efficiency through low Qg(total) and low Qgd, when benchmarking the switching performance of their devices against alternative offerings,” said the company. ...

Taiwan Semiconductor has introduced ten AEC-Q101-qualified small-signal mosfets. There are seven n-channel parts (including two duals), and three p-channel parts (one dual) in the ‘TQM’ line – see the table below. Three packages are used: SOT-236, SOT-363 or SOT-323, and they are rated for >2kV ESD withstanding. “In addition to automotive applications, these small-footprint MOSFETs are ideal for high-reliability commercial designs ...

Infineon is aiming at 48V automotive applications with AUCN08S7N013, an 80V mosfet in a 5 x 6mm SSO8 that has a maximum on-resistance of 1.3mΩ at 25°C (Tj, 10Vgs, 88A Id). “48V applications including electric power steering, braking systems, power switches in zone architectures, battery management, e-fuse boxes, dc-dc and brushless dc motor drives,” it said. The mosfet is several ...

Navitas Semiconductor has made fast versions of its Gen-3 650 and 1,200V silicon carbide mosfets, branded ‘G3F’ and available in packages including D2PAK-7 to TO-247-4. “We’re pushing the boundaries of SiC, with up to 600kHz switching speeds said company v-p of technology Sid Sundaresan. One proposed application is in continuous-conduction-mode totem-pole power factor correction (CCM TPPFC) circuits up to 10kW in ...

Infineon has announced a flurry of new power products as a prelude to PCIM in Nuremberg next week, the latest of which is a family of 600V super-junction mosfets. Its eighth generation, “the devices combine the best features of the 600V CoolMOS 7 series and are the successors to the P7, PFD7, C7, CFD7, G7 and S7 product families”, according ...

Infineon is putting 650V silicon carbide mosfet die into two packages with SO-type footprints: a thin (1.5mm) bottom-cooled 8 x 8mm leadless TO (TOLL – TO leadless), and 9.8 x 15 x 2.3mm 16 leg SO version with top-side cooling (‘TOLT’ package) (see photo). Die with typical on-resistances of 20, 40, 50 or 60mΩ are available in either package, and ...

SemiQ will unveil 1,200V silicon carbide half-bridges packaged in S3 modules at PCIM next month. The industry-standard package is 62mm long and 26.3mm high. So far, only the part numbers and basic specs have been revealed: GCMX003A120S3B1-N 600A 3mΩ GCMX005A120S3B1-N 400A 4.5mΩ They will be aimed at induction heaters, welding equipment, uninterruptible power supplies photovoltaic inverters, wind inverters, energy storage, ...

Nexperia has put 1,200V silicon carbide mosfet die into D2PAK-7 surface mount package, also known as TO-263-7. “SiC switches in SMD packages like D2PAK-7 [are] becoming increasingly popular in industrial applications including electric vehicle charging, uninterruptible power supplies and inverters for solar and energy storage.” NSF0xx120D7A0 is the SiC mosfet family name, and they come with different on-resistances: NSF030120D7A0 30mΩ ...

Silicon carbide chip company SemiQ has begun a known-good-die screening program for SiC mosfets “that delivers electrically sorted and optically inspected SiC technology ready for back-end processing and direct die attachment”, it said. It covers 1,200V 20 (pictured), 40 or 80mΩ mosfet die (119, 63 or 35A at 25°C respectively). “Our known-good-die SiC mosfets provide performance advantages such as near-constant ...