Tag Archives: half-bridge

SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two mosfet hald-bridges and two Schottky half-bridges, aimed at new designs as well as efficiency-boosting replacements in legacy systems. 1.2kV 62mm power modules  Configuration Current Rds(on) GCMX003A120S7B1 SiC mosfet half-bridge ...

Infineon Technologies is to integrate 600 and 700V GaN power hemts alongside gate driver chips inside single packages, in 5 x 6mm or 6 x 8mm SMD packages. IGI70NxxxA2xS is to be a 700V range that combines a single GaN transistor with a single-channel driver in 5 x 6mm PQFN with with 140 to 500mΩ options (IGI70NxxxA2PS), or 6 x ...

SemiQ will unveil 1,200V silicon carbide half-bridges packaged in S3 modules at PCIM next month. The industry-standard package is 62mm long and 26.3mm high. So far, only the part numbers and basic specs have been revealed: GCMX003A120S3B1-N 600A 3mΩ GCMX005A120S3B1-N 400A 4.5mΩ They will be aimed at induction heaters, welding equipment, uninterruptible power supplies photovoltaic inverters, wind inverters, energy storage, ...

New Yorker Electronics is aiming at displacing PowerPAK 1212 packaged mosfets by stocking a pair of symmetric 80V n-channel mosfets in a single 3.3 x 3.3mm package from Vishay. Called SiZF4800LDT, the “device provides designers with a space-saving solution for synchronous buck converters, point-of-load converters, and half-bridge and full-bridge power stages,” according to New Yorker. “In these applications, the high ...

Interest in ~30V half-bridge drivers is increasing here in wonderland, with the Nat Semi LM2725, LM2726 and LM2722 particularly attractive for their automatic dead-band adjustment, 4V minimum operating voltage and easy-to-handle packages. Sadly, they are all also obsolete. Their successor, the LM27222, now from TI obviously, is not at all obsolete, and has some additional automated features, but has an ...

EPC9176 is a GaN-based three-phase inverter with a 81 x 75 mm footprint (with connector) that can operate across 20 to 80V and up to 20A (28A peak). “This voltage range and power level makes the solution ideal for a variety of three-phase brushless dc motor drive applications with 36 to 80V input including eBikes, eScooters, power tools, drones, robots, ...

Nexperia’s app note ‘AN90011 Half-bridge mosfet switching and its impact on emc’ includes a lot of valuable background information, such as how and why to perform double pulse testing, how to set-up a simulation and tips on layout. Well worth a look as it is an easy read for such a technical subject. Hats off to whoever wrote AN90011, which can be ...

AOS has announced a 50W coil-driver for wireless charging transmitters. AOZ32034AQV is a half-bridge, designed to be used in full-bridge circuits driving a resonant tank circuit. “A key feature of this product family is the ability to adjust mosfet gate drive using the slew rate control pin,” said the company. “This allows a designer to trade-off between EMI and efficiency.” Slew ...

Infineon has introduced a 50kW automotive-qualified IGBT half bridge for electric and hybrid vehicles. Called FF300R08W2P2_B11A, and rated to 230Arms, it includes a pair of 750V IGBTs from the company’s EDT2 generation, optimised for 10kHz switching. “The chipset has benchmark current density combined with short circuit ruggedness for reliable inverter operation under harsh environmental conditions,” said Infineon. “The EDT2 IGBTs also ...

Renesas has introduced a pair of 100V half-bridge mosfet gate drivers. HIP2211 is a pin-compatible upgrade to the company’s existing ISL2111 and has separate high-side and low-side PWM input pins, leaving dead-time control up to the host microcontroller. PWM inputs are 3.3V logic and Vdd tolerant. Comes in 8-lead SOIC or 10-lead 4 x 4mm TDFN. HIP2210 handles more internally. It ...