Research

Frequency doubled 540nm fibre laser outputs 60W

Fibre could lead to sensors and filters

Infineon has organic transistors operating well below the 20V of existing material systems

Belgian researchers deposit polysilicon germanium at CMOS-compatible 450°C

An academic SiGe consortium claims it has created the world's best strained silicon technology

AMD and Albany Nanotech have announced a strained silicon R&D joint effort

Theoretical studies at the University of Glasgow suggest that nano-scale transistors will be degraded by quantum vortices

At least two nanolithography techniques promise to sustain the industry’s performance curve for at least another decade

Infineon constructs carbon nanotube transistor with a channel length of 18nm

UK researchers file a patent for a technique that enables interconnects to be patterned on 3D structures